Czochralski相关论文
In:Ho:LiNbO3 crystals doped with various concentrations of In3+(0, 1 mol.%, 3 mol.%, 5 mol.%), fixed concentrations of H......
In integrated circuit-grade single silicon Czochralski growth, the position and material of heat shield are main paramet......
The Yb3+:LiGd(WO4)2 crystal with the dimension of Φ15×35 mm3 was grown by Czochralski technique. The spectroscopic cha......
A Nd3+ :(Sr0.7Ca0.3)3Y(BO3)3 crystal with dimensions of 17×23 mm3 has been grown by the Czochralski method. The spectro......
OH~- absorption and nonvolatile holographic storage properties in Mg:Ru:Fe:LiNbO_3 crystal as a func
Mg:Ru:Fe:LiNbO3 crystals with various concentrations of MgO (in mole) and fixed content of RuO2 and Fe2O3 (in mass) are ......
Numerical study of heat transport and fluid flow during the silicon crystal growth process by the Cz
A global analysis of heat transfer and fluid flow in a real Czochralski single silicon crystal furnace is developed usin......
A Ca9Yb(VO4)7 crystal with dimensions of Φ23 mm×35 mm was grown successfully by Czochralski method. Its thermal conduc......
The potassium tantalate niobate KTa_(0.63)Nb_(0.37)O_3 single crystal with large size and good quality was synthesized b......
提拉法(Czochralski)是工业化生长硅单晶最广泛使用的方法,晶体生长炉内高温辐射及对流对生长晶体质量十分关键。同时考虑生长炉内......
Growth, structural, spectral and high-power continuous-wave laser operation of Yb_(0.11)Gd_(0.89)COB
A Yb_(0.11)Gd_(0.89)Ca_4O(BO_3)_3 crystal with new composition was grown by the Czochralski method. The crystal structur......
Effect of dopant concentration on the spectra characteristic in Zr~(4+) doped Yb:Nd:LiNbO_3 crystals
A series of Yb:Nd:LiNbO_3 crystals tridoped with various concentrations of Zr~(4+)(1 mol.%, 2 mol.% and 4 mol.%) were gr......
We demonstrate the spectroscopic and laser performance before and after 100 Mrad gamma-ray irradiation on an Er,Pr:GYSGG......
本文使用铱坩埚感应加热Czochralski法成功地生长出了无色透明且尺寸达5 0mm× 6 0mm的Lu2 SiO5:Ce晶体。XRD结构分析表明 ,该晶......
Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied mec......
Sub-bandgap photocurrent response and carrier transport properties of undoped semi-insulating LEG Ga
Undoped (ND) semi-insulating (SI) liquid encapsulated Czochralski (LEG) GaAs crystals were investigated by photocurrent......
采用了一种使用密封铂坩埚的 Bridgman—Stockbager 法制备 GdF_3、TbF_3、DyF_3、HoF_3和 ErF_3的单晶。又用 Czochralski 工艺也......
Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Devices
Based on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilte......
报道了诸如Nd:YAG等的高温氧化物晶体在使用Cz(Czochralski)方法晶体生长过程中温度场的数值模拟研究。在计算温度场的过程中引入......
The growth of superconducting YBC single crystals with millimeter dimen-sions by Czochralski technigue is reported in t......
Rare-earth gallium garnets,owing to their high transparency,high indexof refraction(～1.98)and suitable hardness(～7.5mohs)......
The oxygen-related defects in CZ silicon during electron irradiation (1.5 MeV) and subsequent annealing in the range of ......
The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si......
The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell. In this paper, d......
Influence of rapid thermal process on intrinsic gettering in fast neutron irradiated Czochralski sil
A rapid thermal process (RTP) was first introduced into the intrinsic gettering (IG) processes of fast neutron irradiate......
Electrically active defects in the phosphor-doped single-crystal silicon induced by helium-ion irradiation under thermal......
The effects of fast neutron irradiation on oxygen atoms in Czochralski silicon(CZ-Si) are investigated systemically by u......
Judd-Oflet analysis of spectrum and laser performance of Ho:YAP crystal end-pumped by 1.91-μm Tm:YLF
The Ho:YAP crystal is grown by the Czochralski technique.The room temperature polarized absorption spectra of Ho:YAP cry......
A mechanism of oxygen transportation in Czochralski growth of silicon crystals under a horizontal magnetic field(HMCZ)i......
We report the luminescence properties and decay profiles of Ce:YAlO_3,Mn:YAlO_3,and Ce,Mn:YAlO_3 crystals grown by Czoch......
The Yb3+-doped LiGd(MoO4)2 crystal with the size up to Φ20×30 mm3 has been grown by Czochralski technique.The polarize......
PVATePla集团位于德国Wettenberg,在硅晶体生长设备及高温真空设备领域占有技术领先地位的设备制造商,成功地研发了针对科研试验领......
A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial po
A new two-step phosphorous diffusion gettering(TSPDG) process using a sacrificial porous silicon layer(PSL) is proposed.......
A compact all-solid-state continuous-wave (CW) laser at 1047 nm is developed based on Nd:LuLF, which is grown through th......
The methods to grow a novel upconversion crystal Ba2ErCI7 are reported in this note. Ba2ErCI7 material was synthesized ......
Influence of co-precipitation of copper and nickel on the formation of a denuded zone in Czochralski
The influence of co-precipitation of copper and nickel on the formation of a denuded zone(DZ) in Czochralski silicon(Cz ......
Elaboration and characterization of a KCl single crystal doped with nanocrystals of a Sb_2O_3 semico
Undoped and doped KCl single crystals have been successfully elaborated via the Czochralski(Cz) method.The effects of do......
Numerical simulation of the mixed convection induced by buoyancy, crystal rotation, and also unbalanced surface tension......
Spectral investigation of R, Ce:YAG(R: Pr~(3+), Eu~(3+), Gd~(3+)) single crystals and their applicat
Eu3+, Pr3+, or Gd3+codoped Ce:YAG single crystals were grown by using the Czochralski method. The photoluminescence(PL) ......
The 4-at.% Tm:Sc_2SiO_5 (Tm:SSO) crystal is successfully obtained by the Czochralski method. The optical properties and ......
SiGe single crystals with different Ge concentrations were measured by Fourier transform infrared (FTIR) spec-troscopy a......
Surface passivation performances of Al_2O_3 layers deposited on p-type Czochralski Si wafers by atomic layer deposition(......
Crystallization of high-temperature superconductors YBa_2Cu_3O_(0.5+x)and(La,Sr)_2CuO_(4-y)from homogeneous nonstoichio......
Bi_(12)SiO_(20)single cryslats of dimensions 45×50×180mm about 3.5kg in wei-ght have been grown in our institute by t......
Chrysoberyl doped with Ti,Cr,Ni,Co,Mn,Fe has been crystallizedfrom the melt BeO-Al_2O_3(Czochralski technique),from the......
β-BBO is a excellent nonlinear optical crystal. The phase transition point of the crystal is lower than its melting po......
利用荷电粒子活化分析和沟道技术相结合,通过测定从〈100〉、〈110〉及随机方向入射的氘束由~(10)B(d,n)~(11)C而产生的~(11)C的放......
报道了Pb_(0.4)Ba_(0.6)Nb_2O_6晶体的Czochralski生长条件,晶体结构分析,及晶体的二波混合及四波混合响应特性.当双束夹角2■在22......
The spectroscopic and laser properties of zinc tungstate doped with Cr ion at room temperature and low temperature have......
Twin-free single crystals of Tb0.3Dy0.7Fe2 along orientation have been grown by Czochralski method with cold crucible ......
